SS8P2L(2019) Просмотр технического описания (PDF) - Vishay Semiconductors

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Компоненты Описание

производитель

SS8P2L
(Rev.:2019)

High Current Density Surface Mount Schottky Barrier Rectifiers

Vishay Semiconductors 

www.vishay.com

SS8P2L, SS8P3L

Vishay General Semiconductor

ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)

PARAMETER

SYMBOL

TEST CONDITIONS

Maximum instantaneous forward voltage

Maximum reverse current

Typical junction capacitance

VF (1)

IR (2)

CJ

IF = 4.0 A

IF = 8.0 A

TA = 25 °C

IF = 4.0 A

IF = 8.0 A

TA = 125 °C

VR = 30 V

TA = 25 °C

TA = 125 °C

4.0 V, 1 MHz

Notes

(1) Pulse test: 300 μs pulse width, 1 % duty cycle

(2) Pulse test: Pulse width  40 ms

TYP.

0.447

0.533

0.357

0.472

55

24

330

MAX.

-

0.57

-

0.49

200

35

-

UNIT

V

μA

mA

pF

THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)

PARAMETER

SYMBOL

SS8P2L

Typical thermal resistance

RJA (1)

60

RJL

3.5

Note

(1) Units mounted on recommended PCB 1 oz. pad layout

SS8P3L

UNIT

°C/W

ORDERING INFORMATION (Example)

PREFERRED P/N

UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY

SS8P3L-M3/86A

0.1

86A

1500

SS8P3L-M3/87A

0.1

SS8P3LHM3_A/H (1)

0.1

SS8P3LHM3_A/I (1)

0.1

87A

6500

H

1500

I

6500

DELIVERY MODE

7" diameter plastic tape and reel

13" diameter plastic tape and reel

7" diameter plastic tape and reel

13" diameter plastic tape and reel

Note

(1) AEC-Q101 qualified

Revision: 29-Jan-2019

2

Document Number: 89001

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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