FGB20N60SFD Просмотр технического описания (PDF) - Fairchild Semiconductor
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FGB20N60SFD Datasheet PDF : 9 Pages
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Typical Performance Characteristics
Figure 13. Turn-off Characteristics vs.
Gate Resistance
1000
Common Emitter
VCC = 600V, VGE = 15V
IC = 20A
TC = 25oC
TC = 125oC
100
td(of f)
tf
10
0
10 20 30 40
50
60
Gate Resistance, RG [Ω]
Figure 15. Turn-off Characteristics vs.
Collector Current
500
Common Emitter
VGE = 15V, RG = 10Ω
TC = 25oC
TC = 125oC
100
td(off )
Figure 14. Turn-on Characteristics vs.
Collector Current
100
Common Emitter
VGE = 15V, RG = 10Ω
TC = 25oC
TC = 125oC
tr
10
td(o n)
0
10
20
30
40
Collector Current, IC [A]
Figure 16. Switching Loss vs. Gate Resistance
3
Common Emitter
VCC = 600V, VGE = 15V
IC = 20A
1 TC = 25oC
TC = 125oC
Eon
tf
10
0
10
20
30
40
Collector Current, IC [A]
Figure 17. Switching Loss vs. Collector Current
10
Common Emitter
VGE = 15V, RG = 10Ω
TC = 25oC
1 TC = 125oC
Eon
0.1
0.01
0
Eof f
10
20
30
40
Collector Current, IC [A]
Eoff
0.1
0
10 20 30 40 50 60
Gate Resistance, RG [Ω]
Figure 18. Turn off Switching
SOA Characteristics
100
10
Safe Operating Area
1 VGE = 15V, TC = 125oC
1
10
100
Collector-Emitter Voltage, VCE [V]
1000
©2013 Fairchild Semiconductor Corporation
6
FGB20N60SFD_F085 Rev. C1
www.fairchildsemi.com
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