FGB20N60SF(2010) Просмотр технического описания (PDF) - Fairchild Semiconductor
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FGB20N60SF Datasheet PDF : 8 Pages
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FGB20N60SF
600V, 20A Field Stop IGBT
Features
• High Current Capability
• Low Saturation Voltage: VCE(sat) =2.2V @ IC = 20A
• High Input Impedance
• Fast Switching
• RoHS Compliant
Applications
• Welder, UPS, SMPS, PFC
October 2010
General Description
Using Novel Field Stop IGBT Technology, Fairchild’s new series
of Field Stop IGBTs offer the optimum performance for Welder,
UPS, SMPS and PFC applications where low conduction and
switching losses are essential.
COLLECTOR
(FLANGE)
GC E
TO-263AB/D2-PAK
Absolute Maximum Ratings
Symbol
VCES
VGES
IC
ICM (1)
PD
TJ
Tstg
TL
Description
Collector to Emitter Voltage
Gate to Emitter Voltage
Collector Current
Collector Current
Pulsed Collector Current
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction Temperature
@ TC = 25oC
@ TC = 100oC
@ TC = 25oC
@ TC = 25oC
@ TC = 100oC
Storage Temperature Range
Maximum Lead Temp. for soldering
Purposes, 1/8” from case for 5 seconds
Notes:
1: Repetitive rating: Pulse width limited by max. junction temperature
Thermal Characteristics
Symbol
Parameter
RθJC
RθJA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient (PCB Mount)(2)
Notes:
2: Mounted on 1” square PCB(FR4 or G-10 material)
C
G
E
Ratings
600
± 20
40
20
60
208
83
-55 to +150
-55 to +150
300
Typ.
-
-
Max.
0.6
40
Units
V
V
A
A
A
W
W
oC
oC
oC
Units
oC/W
oC/W
©2008 Fairchild Semiconductor Corporation
1
FGB20N60SF Rev. A
www.fairchildsemi.com
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