FDPF20N50(2007) Просмотр технического описания (PDF) - Fairchild Semiconductor
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производитель
FDPF20N50 Datasheet PDF : 10 Pages
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Typical Performance Characteristics
Figure 1. On-Region Characteristics
V
GS
Top : 15.0 V
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
101 Bottom : 5.5 V
100
10-1
* Notes :
1. 250µs Pulse Test
2. T = 25oC
C
100
101
V , Drain-Source Voltage [V]
DS
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
0.8
0.6
V = 10V
GS
0.4
V = 20V
GS
0.2
0.0
0
* Note : T = 25oC
J
15
30
45
60
75
90
I , Drain Current [A]
D
Figure 5. Capacitance Characteristics
6000
5000
4000
3000
2000
1000
0
10-1
C
oss
C
iss
C = C + C (C = shorted)
iss
gs
gd ds
C =C +C
oss
ds
gd
C =C
rss
gd
* Note :
1. V = 0 V
GS
C
2. f = 1 MHz
rss
100
101
V , Drain-Source Voltage [V]
DS
Figure 2. Transfer Characteristics
102
150oC
101
25oC
-55oC
100
2
* Notes :
1. V = 40V
DS
2. 250µs Pulse Test
4
6
8
10
12
V , Gate-Source Voltage [V]
GS
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperatue
101
150oC
25oC
*Notes :
1. V = 0V
GS
2. 250µs Pulse Test
100
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
V , Source-Drain voltage [V]
SD
Figure 6. Gate Charge Characteristics
12
V = 100V
DS
10
V = 250V
DS
V = 400V
DS
8
6
4
2
* Note : I = 20A
D
0
0
10
20
30
40
50
Q , Total Gate Charge [nC]
G
3
FDP20N50 / FDPF20N50 Rev. B
www.fairchildsemi.com
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