BF1102 Просмотр технического описания (PDF) - NXP Semiconductors.
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BF1102 Datasheet PDF : 14 Pages
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NXP Semiconductors
Dual N-channel dual gate MOS-FETs
ALL GRAPHS FOR ONE MOS-FET
Product specification
BF1102; BF1102R
30
handbook, halfpage
ID
(mA)
20
VG2-S = 4 V
3.5 V
3V
MGS360
2.5 V
2V
1.5 V
10
1V
0
0
0.4 0.8 1.2 1.6 2.0 2.4
VG1-S (V)
VDS = 5 V.
Tj = 25 C.
Fig.3 Transfer characteristics; typical values.
30
handbook, halfpage
ID
(mA)
20
10
VG1-S = 1.5 V
MGS361
1.4 V
1.3 V
1.2 V
1.1 V
1V
0
0
2
4
6
8
10
VDS (V)
VG2-S = 4 V.
Tj = 25 C.
Fig.4 Output characteristics; typical values.
160
handbook, halfpage
IG1
(μA)
120
80
40
MGS362
VG2-S = 4 V
3.5 V
3V
2.5 V
2V
0
0
0.5
1
1.5
2
2.5
VG1-S (V)
VDS = 5 V.
Tj = 25 C.
Fig.5 Gate 1 current as a function of gate 1
voltage; typical values.
handbook,5h0alfpage
|yfs|
(mS)
40
VG2-S = 4 V
MGS363
3.5 V 3 V
30
2.5 V
20
10
2V
0
0
10
20 ID (mA) 30
VDS = 5 V.
Tj = 25 C.
Fig.6 Forward transfer admittance as a function
of drain current; typical values.
2000 Apr 11
5
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