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Компоненты Описание
BF1102 Просмотр технического описания (PDF) - NXP Semiconductors.
Номер в каталоге
Компоненты Описание
производитель
BF1102
Dual N-channel dual gate MOS-FETs
NXP Semiconductors.
BF1102 Datasheet PDF : 14 Pages
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NXP Semiconductors
Dual N-channel dual gate MOS-FETs
Product specification
BF1102; BF1102R
Table 1
Scattering parameters: V
DS
= 5 V; V
G2-S
= 4 V; I
D
= 15 mA; T
amb
= 25
C
f
(MHz)
s
11
MAGNITUDE
(ratio)
ANGLE
(deg)
s
21
MAGNITUDE
(ratio)
ANGLE
(deg)
s
12
MAGNITUDE
(ratio)
ANGLE
(deg)
50
100
200
300
400
500
600
700
800
900
1 000
0.987
0.981
0.961
0.933
0.899
0.867
0.834
0.805
0.779
0.758
0.740
5.6
11.1
21.9
32.1
42.0
51.1
59.9
67.9
75.7
82.1
89.0
4.069
4.042
3.926
3.778
3.593
3.412
3.216
3.010
2.804
2.656
2.509
173.5
167.0
154.4
142.4
130.6
119.6
109.2
99.0
89.2
80.3
69.9
0.001
0.002
0.005
0.006
0.007
0.007
0.007
0.006
0.007
0.007
0.009
95.4
81.3
75.8
69.6
65.6
64.4
67.5
78.7
92.7
120.7
125.5
s
22
MAGNITUDE
(ratio)
0.986
0.983
0.976
0.960
0.945
0.928
0.914
0.901
0.886
0.889
0.890
ANGLE
(deg)
3.0
6.0
12.0
17.7
23.2
29.1
34.1
39.8
45.1
49.7
55.7
Table 2
Noise data: V
DS
= 5 V; V
G2-S
= 4 V; I
D
= 15 mA; T
amb
= 25
C
f
(MHz)
F
min
(dB)
opt
(ratio)
800
2
0.621
(deg)
61.61
R
n
(
)
25.85
2000 Apr 11
10
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