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TC682 Просмотр технического описания (PDF) - TelCom Semiconductor Inc => Microchip

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Компоненты Описание
производитель
TC682
TelCom-Semiconductor
TelCom Semiconductor Inc => Microchip TelCom-Semiconductor
TC682 Datasheet PDF : 6 Pages
1 2 3 4 5 6
INVERTING VOLTAGE DOUBLER
TC682
ABSOLUTE MAXIMUM RATINGS*
VIN .......................................................................... +5.8V
VIN dV/dT ............................................................. 1V/µsec
VOUT ......................................................................– 11.6V
VOUT Short-Circuit Duration ............................ Continuous
Power Dissipation (TA 70°C)
Plastic DIP ........................................................... 730mW
SOIC ...............................................................470mW
Storage Temperature Range ................ – 65°C to +150°C
Lead Temperature (Soldering, 10 sec) ................. +300°C
*This is a stress rating only and functional operation of the device at these
or any other conditions above those indicated in the operational sections of
the specifications is not implied. Exposure to Absolute Maximum Rating
Conditions for extended periods may affect device reliability.
ELECTRICAL CHARACTERISTICS: Over Operating Temperature Range, VIN = +5V, test circuit Figure 1,
unless otherwise indicated.
Symbol Parameter
Test Conditions
Min Typ Max Unit
VIN
Supply Voltage Range
IIN
Supply Current
ROUT
VOUT Source Resistance
Source Resistance
FOSC
PEFF
VOUT EFF
Oscillator Frequency
Power Efficiency
Voltage Conversion Efficiency
RL = 2k
RL = , TA = 25°C
RL =
IL– = 10mA, TA = 25°C
IL– = 10mA
IL– = 5mA, VIN = 2.8V
RL = 2k, TA = 25°C
VOUT, RL =
2.4
5.5 V
185 300 µA
400
140 180
230
170 320
12
— kHz
90
92
—%
99 99.9 — %
TelCom Semiconductor reserves the right to make changes in the circuitry or specifications detailed in this manual at any time without notice. Minimums
and maximums are guaranteed. All other specifications are intended as guidelines only. TelCom Semiconductor assumes no responsibility for the use
of any circuits described herein and makes no representations that they are free from patent infringement.
PIN DESCRIPTION
Pin No.
8-Pin DIP/SOIC
1
2
3
4
5
6
7
8
Symbol
C1–
C2+
C2–
VOUT
GND
VIN
C1+
N/C
Description
Input. Capacitor C1 negative
terminal.
Input. Capacitor C2 positive
terminal.
Input. Capacitor C2 negative
terminal
Output. Negative output voltage
(– 2VIN)
Input. Device ground.
Input. Power supply voltage.
Input. Capacitor C1 positive
terminal
No Connection
VIN
(+5V)
GND
+
C1
+
C2
6
7
VIN
C1+
1 C1–
TC682
2 C2+
3 C2– VOUT 4
GND
5
+–COUT
All Caps = 3.3µF
Figure 1. TC682 Test Circuit
VO–UT
RL
4-22
TELCOM SEMICONDUCTOR, INC.

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