2N7002DWA-13 Просмотр технического описания (PDF) - Diodes Incorporated.
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2N7002DWA-13 Datasheet PDF : 7 Pages
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NOT RECOMMENDED FOR NEW DESIGN
USE DMN65D8LDW
2N7002DWA
8
7
6
5
VGS = 5.0V
4
ID = 115mA
3
VGS = 10V
2
ID = 115mA
1
0
-50 -25 0 25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (C)
Figure 7 On-Resistance Variation with Temperature
1
2.5
)V
(GE
TOLA
2.2
V
D
OL
1.9
H
RES
H
T
1.6
TGAE
, (t)Sh 1.3
VG
ID = 1mA
ID = 250µA
1.0
-50 -25 0 25 50 75 100 125 150
TJ , JUNCTION TEMPERATURE (C)
Figure 8 Gate Threshold Variation vs.Temperature
1 RDS(on)
Limited
NT(A)
0.1
RE
R
U
C 0.01
CE
R
U
O
S
,
I
S
0.001
TA = 150°C
TA = 125°C
TA = 85°C
TA = 25°C
TA = -55°C
0.0001
0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2
VSD, SOURCE-DRAIN VOLTAGE (V)
Figure 9 Diode Forward Voltage vs. Current
)A
NT( 0.1
DC
RE
PW= 10s
R
U
PW= 1s
C
N
PW = 100ms
RAI
PW = 10ms
D 0.01
,
-I
D
TJ(max) = 150°C
PW = 1ms
PW = 100µs
TA = 25°C
VGS = 8V
Single Pulse
0.001 DUT on 1 * MRP Board
0.1
1
10
100
VDS , DRAIN-SOURCE VOLTAGE (V)
Figure 10 SOA, Safe Operation Area
2N7002DWA
Document number: DS36120 Rev. 9 - 3
5 of 7
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March 2017
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