2N7002DWA-13 Просмотр технического описания (PDF) - Diodes Incorporated.
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2N7002DWA-13 Datasheet PDF : 7 Pages
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NOT RECOMMENDED FOR NEW DESIGN
USE DMN65D8LDW
2N7002DWA
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol Min Typ
OFF CHARACTERISTICS (Note 8)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage
ON CHARACTERISTICS (Note 8)
BVDSS
60
—
IDSS
—
—
IGSS
—
—
Gate Threshold Voltage
Static Drain-Source On-Resistance
VGS(TH)
0.8
—
—
—
RDS(ON)
—
—
Forward Transconductance
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 9)
gFS
80
—
VSD
—
0.8
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge VGS = 10V
Total Gate Charge VGS = 4.5V
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Ciss
Coss
Crss
RG
Qg
Qg
Qgs
Qgd
tD(ON)
tR
tD(OFF)
tF
—
22.0
—
3.2
—
2.0
—
88
—
0.87
—
0.43
—
0.11
—
0.11
—
3.3
—
3.2
—
12.0
—
6.3
Notes:
8. Short duration pulse test used to minimize self-heating effect.
9. Guaranteed by design. Not subject to production testing.
Max
—
1.0
±5
2.5
8
6
—
1.2
—
—
—
—
—
—
—
—
—
—
—
—
Unit
Test Condition
V VGS = 0V, ID = 250µA
µA VDS = 60V, VGS = 0V
µA VGS = ±20V, VDS = 0V
V VDS = VGS, ID = 250µA
Ω VGS = 5.0V, ID = 0.115A
Ω VGS = 10.0V, ID = 0.115A
mS VDS = 10V, ID = 0.115A
V VGS = 0V, IS = 115mA
pF VDS = 25V, VGS = 0V, f = 1.0MHz
Ω VDS = 0V, VGS = 0V, f = 1.0MHz
nC VGS = 10V, VDS = 30V,
ID = 150mA
ns VDD = 30V, ID = 0.115A, VGEN = 10V,
RGEN = 25Ω
2N7002DWA
Document number: DS36120 Rev. 9 - 3
3 of 7
www.diodes.com
March 2017
© Diodes Incorporated
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