STU11N65M2(2019) Просмотр технического описания (PDF) - STMicroelectronics

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STU11N65M2
(Rev.:2019)

N-channel 650 V, 0.60 Ω typ., 7 A MDmesh™ M2 Power MOSFET in DPAK, TO-220 and IPAK packages

STMicroelectronics 

STD11N65M2, STP11N65M2, STU11N65M2

Electrical characteristics

Table 7. Source-drain diode

Symbol Parameter

Test conditions

ISD

Source-drain current

ISDM (1) Source-drain current (pulsed)

VSD (2) Forward on voltage

VGS = 0 V, ISD = 7 A

trr

Qrr

IRRM

Reverse recovery time

Reverse recovery charge

Reverse recovery current

ISD = 7 A, di/dt = 100 A/µs, VDD = 60 V

(see Figure 17)

trr

Qrr

IRRM

Reverse recovery time

Reverse recovery charge

Reverse recovery current

ISD = 7 A, di/dt = 100 A/µs, VDD = 60 V,

Tj = 150 °C (see Figure 17)

1. Pulse width is limited by safe operating area.

2. Pulse test: pulse duration = 300 µs, duty cycle 1.5%.

Min. Typ. Max. Unit

-

7

A

-

28

A

-

1.6

V

-

318

ns

-

2.5

µC

-

15.5

A

-

437

ns

-

3.2

µC

-

15

A

DS10348 - Rev 6

page 4/27

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