10XSD200 Просмотр технического описания (PDF) - Freescale Semiconductor

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10XSD200

Dual 10 mOhm High Side Switch

Freescale Semiconductor 

ELECTRICAL CHARACTERISTICS

STATIC ELECTRICAL CHARACTERISTICS

Table 3. Static Electrical Characteristics (continued)

Unless specified otherwise: 8.0 V  VPWR  36 V, 3.0 V  VDD  5.5 V, - 40 C  TA  125 C, GND = 0 V. Typical values are

average values evaluated under nominal conditions TA = 25 °C, VPWR = 28 V & VDD = 5.0 V, unless specified otherwise.

parameter

Symbol

Min

Typ

Max

Unit

ELECTRICAL CHARACTERISTICS OF THE OUTPUT STAGE (HS0 AND HS1) (CONTINUED)

EcoSmR1peOnustaptuiotnC(1u9r)reant toSutepnustincugrErernrot rle(v%el(l(eSveenl)seafrteartioofCfsSeRt 1 selected):

ESR1_ERR(Comp)

TJ=-40 C

1.5 A

-10

–

0.5 A

-11

–

0.25 A

-18

–

0.15 A

TJ=125C

-29

–

1.5 A

0.5 A

0.25 A

0.15 A

TJ=25 to 125C

-8.0

–

-10

–

-12

–

-16

–

1.5 A

0.5 A

0.25 A

0.15 A

-8.0

–

-10

–

-13

–

-21

–

%

10

11

18

29

8.0

10

12

16

8.0

10

13

21

EunScRo0mOpuetnpsuat tCedu(r2re0)n)taSt eonustpinugtsECrruorrreinntplaervaellle(Sl menosdee

(%,

ratio

CSR0

selected):

ESR0_ERR_PAR

TJ=-40 C

6.0 A (per channel)

-10

–

3.0 A (per channel)

-11

–

TJ=125C

6.0 A (per channel)

-8.0

–

3.0 A (per channel)

-8.0

–

TJ=25 to 125C

6.0 A (per channel)

-8.0

–

3.0 A (per channel)

-8.0

–

%

10

11

8.0

8.0

8.0

8.0

Notes:

19. See note (20), but with ICSNS_MEAS obtained after compensation of I_LOAD_ERR_RAND (see Activation and Use of Offset Compensation).

Further accuracy improvements can be obtained by performing a 1 or 2 point calibration.

20. ESRx_ERR=(ICSNS_MEAS / ICSNS_MODEL) -1, with ICSNS_MODEL = (I(HS[x])+ I_LOAD_ERR_SYS) * CSRx , (I_LOAD_ERR_SYS defined above, see

section Current Sense Error Model). With this model, load current becomes: I(HS[x]) = ICSNS / CSRx - I_LOAD_ERR_SYS

10XSD200

12

Analog Integrated Circuit Device Data

Freescale Semiconductor

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