SKW25N120(2008) Просмотр технического описания (PDF) - Infineon Technologies

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Компоненты Описание

производитель

SKW25N120
(Rev.:2008)

Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode

Infineon Technologies 

Figure A. Definition of switching times

SKW25N120

i,v

di /dt

F

I

F

I

rrm

t =t +t

rr S F

Q =Q +Q

rr

S

F

t

rr

t

t

S

F

QQ

S

F

10% I

t

rrm

di /dt V

90% I r r

R

rrm

Figure C. Definition of diodes

switching characteristics

τ1

r1

Tj (t)

p(t)

r1

τ2

r2

r2

τn

rn

rn

TC

Figure D. Thermal equivalent

circuit

Figure B. Definition of switching losses

Figure E. Dynamic test circuit

Leakage inductance Lσ =180nH,

and stray capacity Cσ =40pF.

Power Semiconductors

12

Rev. 2_2 Sep 08

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