BCP51-16,135 Просмотр технического описания (PDF) - NXP Semiconductors.

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производитель

BCP51-16,135

45 V, 1 A PNP medium power transistors

NXP Semiconductors. 

NXP Semiconductors

BCP51; BCX51; BC51PA

45 V, 1 A PNP medium power transistors

300

hFE

(1)

200

(2)

100

(3)

006aac688

−1.6

IC

(A)

−1.2

−0.8

−0.4

006aaa230

IB (mA) = −45 −40.5 −36

−31.5

−27

−22.5

−18

−13.5

−9

−4.5

0

–10–4

–10–3

–10–2

–10–1

–1

–10

IC (A)

VCE = 2 V

(1) Tamb = 100 C

(2) Tamb = 25 C

(3) Tamb = 55 C

Fig 15. DC current gain as a function of collector

current; typical values

–1.2

VBE

(V)

(1)

–0.8

(2)

006aac689

0

0

−0.4

−0.8

−1.2

−1.6

−2.0

VCE (V)

Tamb = 25 C

Fig 16. Collector current as a function of

collector-emitter voltage; typical values

–10

VCEsat

(V)

006aac690

–1

–0.4

(3)

–10–1

(1)

(2)

0.0

–10–1

–1

–10

–102

–103

–104

IC (mA)

–10–2

–10–1

–1

(3)

–10

–102

–103

–104

IC (mA)

VCE = 2 V

(1) Tamb = 55 C

(2) Tamb = 25 C

(3) Tamb = 100 C

Fig 17. Base-emitter voltage as a function of collector

current; typical values

IC/IB = 10

(1) Tamb = 100 C

(2) Tamb = 25 C

(3) Tamb = 55 C

Fig 18. Collector-emitter saturation voltage as a

function of collector current; typical values

BCP51_BCX51_BC51PA

Product data sheet

All information provided in this document is subject to legal disclaimers.

Rev. 9 — 13 October 2011

© NXP B.V. 2011. All rights reserved.

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