STAC2932BW Просмотр технического описания (PDF) - STMicroelectronics

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STAC2932BW

HF/VHF/UHF RF power N-channel MOSFETs

STMicroelectronics 

STAC2932B

1

Electrical data

1.1

1.2

Maximum ratings

(TCASE = 25 °C)

Table 2. Absolute maximum ratings

Symbol

Parameter

V(BR)DSS(1) Drain source voltage

VDGR

Drain-gate voltage (RGS = 1 MΩ)

VGS

Gate-source voltage

ID

Drain current

PDISS

Power dissipation

TJ

Max. operating junction temperature

TSTG

Storage temperature

1. TJ = 150 °C

Thermal data

Table 3. Thermal data

Symbol

Parameter

RthJC

Junction - case thermal resistance

Electrical data

Value

Unit

125

V

125

V

±20

V

40

A

625

W

200

°C

-65 to +150

°C

Value

0.28

Unit

°C/W

Doc ID 15497 Rev 5

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