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NLVSX4373MUTAG Просмотр технического описания (PDF) - ON Semiconductor

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NLVSX4373MUTAG
ON-Semiconductor
ON Semiconductor ON-Semiconductor
NLVSX4373MUTAG Datasheet PDF : 12 Pages
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NLSX4373
MAXIMUM RATINGS
Symbol
Parameter
Value
Condition
Unit
VCC
Highside DC Supply Voltage
0.3 to +7.0
V
VL
Highside DC Supply Voltage
0.3 to +7.0
V
I/O VCC VCCReferenced DC Input/Output Voltage
0.3 to (VCC + 0.3)
V
I/O VL VLReferenced DC Input/Output Voltage
0.3 to (VL + 0.3)
V
VEN
Enable Control Pin DC Input Voltage
0.3 to +7.0
V
II/O_SC ShortCircuit Duration (I/O VL and I/O VCC to GND)
40
Continuous
mA
TSTG
Storage Temperature
65 to +150
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
RECOMMENDED OPERATING CONDITIONS
Symbol
Parameter
VCC
Highside Positive DC Supply Voltage
VL
Highside Positive DC Supply Voltage
VEN
Enable Control Pin Voltage
VIO
Enable Control Pin Voltage
TA
Operating Temperature Range
Min
1.5
1.5
GND
GND
40
Max
Unit
5.5
V
5.5
V
5.5
V
5.5
V
+85
°C
VL
VCC
PU1
RPullup
10 kW
OneShot
Block
Gate
Bias
OneShot
Block
PU2
RPullup
10 kW
EN
EN
I/O VL
N
I/O VCC
Figure 1. Block Diagram (1 I/O Line)
http://onsemi.com
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