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L6402MH10RI

128 Megabit (4 M x 32-Bit/8 M x 16-Bit) MirrorBit™ 3.0 Volt-only Uniform Sector Flash Memory with Versatile I/O™ Control

Advanced Micro Devices

L6402MH10RI Datasheet PDF : 57 Pages

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GENERAL DESCRIPTION

The Am29LV6402M consists of two 64 Mbit, 3.0 volt

single power supply flash memory devices and is or-

ganized as 4,194,304 doublewords or 8,388,608

words. The device has a 32-bit wide data bus that can

also function as an 16-bit wide data bus by using the

WORD# input. The device can be programmed either

in the host system or in standard EPROM program-

mers.

An access time of 100 or 110 ns is available. Note that

each access time has a specific operating voltage

range (VCC) as specified in the Product Selector Guide

and the Ordering Information sections. The device is

offered in an 80-ball Fortified BGA package. Each de-

vice has separate chip enable (CE#), write enable

(WE#) and output enable (OE#) controls.

Each device requires only a single 3.0 volt power

supply for both read and write functions. In addition to

a VCC input, a high-voltage accelerated program

(WP#/ACC) input provides shorter programming times

through increased current. This feature is intended to

facilitate factory throughput during system production,

but may also be used in the field if desired.

The device is entirely command set compatible with

the JEDEC single-power-supply Flash standard.

Commands are written to the device using standard

microprocessor write timing. Write cycles also inter-

nally latch addresses and data needed for the pro-

gramming and erase operations.

The sector erase architecture allows memory sec-

tors to be erased and reprogrammed without affecting

the data contents of other sectors. The device is fully

erased when shipped from the factory.

Device programming and erasure are initiated through

command sequences. Once a program or erase oper-

ation has begun, the host system need only poll the

DQ7 and DQ15 (Data# Polling) or DQ6 and DQ14

(toggle) status bits or monitor the Ready/Busy#

(RY/BY#) outputs to determine whether the operation

is complete. To facilitate programming, an Unlock By-

pass mode reduces command sequence overhead by

requiring only two write cycles to program data instead

of four.

The VersatileI/O™ (VIO) control allows the host sys-

tem to set the voltage levels that the device generates

and tolerates on the CE# control input and DQ I/Os to

the same voltage level that is asserted on the VIO pin.

Refer to the Ordering Information section for valid VIO

options.

Hardware data protection measures include a low

VCC detector that automatically inhibits write opera-

tions during power transitions. The hardware sector

protection feature disables both program and erase

operations in any combination of sectors of memory.

This can be achieved in-system or via programming

equipment.

The Erase Suspend/Erase Resume feature allows

the host system to pause an erase operation in a given

sector to read or program any other sector and then

complete the erase operation. The Program Sus-

pend/Program Resume feature enables the host sys-

tem to pause a program operation in a given sector to

read any other sector and then complete the program

operation.

The hardware RESET# pin terminates any operation

in progress and resets the device, after which it is then

ready for a new operation. The RESET# pin may be

tied to the system reset circuitry. A system reset would

thus also reset the device, enabling the host system to

read boot-up firmware from the Flash memory device.

The device reduces power consumption in the

standby mode when it detects specific voltage levels

on CE# and RESET#, or when addresses have been

stable for a specified period of time.

The SecSi™ (Secured Silicon) Sector provides a

128-doubleword/256-word area for code or data that

can be permanently protected. Once this sector is pro-

tected, no further changes within the sector can occur.

The Write Protect (WP#/ACC) feature protects the

first or last sector by asserting a logic low on the WP#

pin.

AMD MirrorBitTM flash technology combines years of

Flash memory manufacturing experience to produce

the highest levels of quality, reliability and cost effec-

tiveness. The device electrically erases all bits within a

sector simultaneously via hot-hole assisted erase. The

data is programmed using hot electron injection.