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MMBTA05LT1(2005) Просмотр технического описания (PDF) - ON Semiconductor

Номер в каталоге
Компоненты Описание
производитель
MMBTA05LT1
(Rev.:2005)
ON-Semiconductor
ON Semiconductor ON-Semiconductor
MMBTA05LT1 Datasheet PDF : 6 Pages
1 2 3 4 5 6
MMBTA05LT1, MMBTA06LT1
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector −Emitter Breakdown Voltage (Note 3)
(IC = 1.0 mAdc, IB = 0)
MMBTA05
MMBTA06
Emitter −Base Breakdown Voltage
(IE = 100 mAdc, IC = 0)
Collector Cutoff Current
(VCE = 60 Vdc, IB = 0)
Collector Cutoff Current
(VCB = 60 Vdc, IE = 0)
(VCB = 80 Vdc, IE = 0)
ON CHARACTERISTICS
MMBTA05
MMBTA06
DC Current Gain
(IC = 10 mAdc, VCE = 1.0 Vdc)
(IC = 100 mAdc, VCE = 1.0 Vdc)
Collector −Emitter Saturation Voltage
(IC = 100 mAdc, IB = 10 mAdc)
Base −Emitter On Voltage
(IC = 100 mAdc, VCE = 1.0 Vdc)
SMALL− SIGNAL CHARACTERISTICS
Current −Gain − Bandwidth Product (Note 4)
(IC = 10 mA, VCE = 2.0 V, f = 100 MHz)
3. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%.
4. fT is defined as the frequency at which |hfe| extrapolates to unity.
Symbol
Min
V(BR)CEO
60
80
V(BR)EBO
4.0
ICES
ICBO
hFE
100
100
VCE(sat)
VBE(on)
fT
100
Max
Unit
Vdc
Vdc
0.1
mAdc
mAdc
0.1
0.1
0.25
Vdc
1.2
Vdc
MHz
5.0 ms
+10 V
0
tr = 3.0 ns
TURN−ON TIME
−1.0 V
VCC
+40 V
TURN−OFF TIME
+VBB
VCC
+40 V
100
Vin
RB
5.0 mF
100
RL
OUTPUT
* CS t 6.0 pF
5.0 ms
tr = 3.0 ns
100
Vin
RB
5.0 mF
100
RL
OUTPUT
* CS t 6.0 pF
*Total Shunt Capacitance of Test Jig and Connectors
For PNP Test Circuits, Reverse All Voltage Polarities
Figure 1. Switching Time Test Circuits
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