MAT02F Просмотр технического описания (PDF) - Analog Devices

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MAT02F

Low Noise, Matched Dual Monolithic Transistor

Analog Devices 

MAT02

WAFER TEST LIMITS (@ 25؇C for VCB = 15 V and IC = 10 ␮A, unless otherwise noted.)

Parameter

Symbol

Conditions

MAT02N

Limits

Units

Breakdown Voltage

Offset Voltage

Input Offset Current

Input Bias Current

Current Gain

Current Gain Match

Offset Voltage

Change vs. VCB

Offset Voltage Change

vs. Collector Current

Bulk Resistance

Collector Saturation Voltage

BVCEO

VOS

IOS

IB

hFE

∆hFE

∆VOS/∆VCB

∆VOS/∆IC

rBE

VCE (SAT)

40

10 µA ≤ IC ≤ 1 mA1

150

1.2

VCB = 0 V

34

IC = 1 mA, VCB = 0 V

400

IC = 10 µA, VCB = 0 V

300

10 µA ≤ IC ≤ 1 mA, VCB = 0 V

4

0 V ≤ VCB ≤ 40 V

50

10 µA ≤ IC ≤ 1 mA1

VCB = 0

50

10 µA ≤ IC ≤ 1 mA1

100 µA ≤ IC ≤ 10 mA

0.5

IC = 1 mA

0.2

IB = 100 µA

V min

µV max

nA max

nA max

min

% max

µV max

µV max

Ω max

V max

NOTES

1Measured at lC = 10 µA and guaranteed by design over the specified range of IC.

Electrical tests are performed at wafer probe to the limits shown. Due to variations in assembly methods and normal yield loss, yield after packaging is not guaranteed

for standard product dice. Consult factory to negotiate specifications based on dice lot qualification through sample lot assembly and testing.

TYPICAL ELECTRICAL CHARACTERISTICS (VCB = 15 V, IC = 10 ␮A, TA = +25؇C, unless otherwise noted.)

Parameter

Symbol

Conditions

MAT02N

Limits

Units

Average Offset

Voltage Drift

Average Offset

Current Drift

Gain-Bandwidth

Product

Offset Current Change vs. VCB

TCVOS

TCIOS

fT

∆IOS/∆VCB

10 µA ≤ IC ≤ 1 mA

0 ≤ VCB ≤ VMAX

IC = 10 µA

VCE = 10 V, IC = 10 mA

0 ≤ VCB ≤ 40 V

0.08

µV/°C

40

pA/°C

200

MHz

70

pA/V

DICE CHARACTERISTICS

Die Size 0.061 × 0.057 inch, 3,477 sq. mils

(1.549 × 1.448 mm, 224 sq. mm)

1. COLLECTOR (1)

2. BASE (1)

3. EMITTER (1)

4. COLLECTOR (2)

5. BASE (2)

6. EMITTER (2)

7. SUBSTRATE

CAUTION

ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily

accumulate on the human body and test equipment and can discharge without detection.

Although the MAT02 features proprietary ESD protection circuitry, permanent damage may

occur on devices subjected to high energy electrostatic discharges. Therefore, proper ESD

precautions are recommended to avoid performance degradation or loss of functionality.

–4–

WARNING!

ESD SENSITIVE DEVICE

REV. C

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