MAT04FP Просмотр технического описания (PDF) - Analog Devices

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MAT04FP

Matched Monolithic Quad Transistor

Analog Devices 

MAT04

ELECTRICAL CHARACTERISTICS (at –25؇C ≤ TA ؎ 85؇C for MAT04E, –40؇C ≤ TA ؎ 85؇C for MAT04F, unless

otherwise noted. Each transistor is individually tested. For matching parameters (VOS, IOS) each dual transistor combination is

verified to meet stated limits. All tests made at endpoints unless otherwise noted.)

Parameter

Symbol

Conditions

MAT04E

Min Typ Max

MAT04F

Min Typ Max Unit

Current Gain

Offset Voltage

Average Offset

Voltage Drift

Input Bias Current

Input Offset Current

Average Offset

Current Drift

Breakdown Voltage

Collector-Base

Leakage Current

Collector-Emitter

Leakage Current

Collector-Substrate

Leakage Current

hFE

VOS

TCVOS

IB

IOS

TCIOS

BVCEO

ICBO

ICES

ICS

10 µA ≤ IC ≤ 1 mA

0 V ≤ VCB ≤ 30 V1

10 µA ≤ IC ≤ 1 mA

0 V ≤ VCB ≤ 30 V2

IC = 100 µA

VCB = 0 V3

IC = 100 µA

0 V ≤ VCB ≤ 30 V

IC = 100 µA

VCB = 0 V

IC = 100 µA

VCB = 0 V

IC = 10 µA

VCB = 40 V

VCE = 40 V

VCS = 40 V

225 625

60 260

0.2 1

160 445

4 20

50

40

0.5

5

0.7

200 500

120 520 µV

0.4 2

µV/°C

200 500 nA

8 40 nA

100

40

pA/°C

V

0.5

nA

5

nA

0.7

nA

REV. D

–3–

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