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MAT04E Просмотр технического описания (PDF) - Analog Devices
Номер в каталоге
Компоненты Описание
производитель
MAT04E
Matched Monolithic Quad Transistor
Analog Devices
MAT04E Datasheet PDF : 12 Pages
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MAT04
ELECTRICAL CHARACTERISTICS
(at –25
؇
C
≤
T
A
؎
85
؇
C for MAT04E, –40
؇
C
≤
T
A
؎
85
؇
C for MAT04F, unless
otherwise noted. Each transistor is individually tested. For matching parameters (V
OS
, I
OS
) each dual transistor combination is
verified to meet stated limits. All tests made at endpoints unless otherwise noted.)
Parameter
Symbol
Conditions
MAT04E
Min Typ Max
MAT04F
Min Typ Max Unit
Current Gain
Offset Voltage
Average Offset
Voltage Drift
Input Bias Current
Input Offset Current
Average Offset
Current Drift
Breakdown Voltage
Collector-Base
Leakage Current
Collector-Emitter
Leakage Current
Collector-Substrate
Leakage Current
h
FE
V
OS
TCV
OS
I
B
I
OS
TCI
OS
BV
CEO
I
CBO
I
CES
I
CS
10
µ
A
≤
I
C
≤
1 mA
0 V
≤
V
CB
≤
30 V
1
10
µ
A
≤
I
C
≤
1 mA
0 V
≤
V
CB
≤
30 V
2
I
C
= 100
µ
A
V
CB
= 0 V
3
I
C
= 100
µ
A
0 V
≤
V
CB
≤
30 V
I
C
= 100
µ
A
V
CB
= 0 V
I
C
= 100
µ
A
V
CB
= 0 V
I
C
= 10
µ
A
V
CB
= 40 V
V
CE
= 40 V
V
CS
= 40 V
225 625
60 260
0.2 1
160 445
4 20
50
40
0.5
5
0.7
200 500
120 520
µ
V
0.4 2
µ
V/
°
C
200 500 nA
8 40 nA
100
40
pA/
°
C
V
0.5
nA
5
nA
0.7
nA
REV. D
–3–
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