MAT04FP Просмотр технического описания (PDF) - Analog Devices
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MAT04FP Datasheet PDF : 12 Pages
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MAT04–SPECIFICATIONS
ELECTRICAL CHARACTERISTICS (@ TA = 25؇C unless otherwise noted. Each transistor is individually tested. For matching
parameters (VOS, IOS, ∆hFE) each dual transistor combination is verified to meet stated limits. All tests made at endpoints unless otherwise noted.)
MAT04E
MAT04F
Parameter
Symbol Conditions
Min Typ Max Min Typ Max Unit
Current Gain
Current Gain Match
Offset Voltage
Offset Voltage Change vs.
Collector Current
Offset Voltage Change vs. VCB
Bulk Emitter Resistance
Input Bias Current
Input Offset Current
Breakdown Voltage
Collector Saturation Voltage
Collector-Base Leakage Current
Noise Voltage Density
Gain Bandwidth Product
Output Capacitance
Input Capacitance
hFE
∆hFE
VOS
∆VOS/∆IC
∆VOS/∆VCB
rBE
IB
IOS
BVCEO
VCE(SAT)
ICBO
en
fT
COBO
CEBO
10 µA ≤ IC ≤ 1 mA
0 V ≤ VCB ≤ 30 V1
IC = 100 µA
0 V ≤ VCB ≤ 30 V2
10 µA ≤ IC ≤ 1 mA
0 V ≤ VCB ≤ 30 V3
10 µA ≤ IC ≤ 1 mA
VCB = 0 V3
10 µA ≤ IC ≤ 1 mA
0 V ≤ VCB ≤ 30 V3
10 µA ≤ IC ≤ 1 mA
VCB = 0 V4
IC = 100 µA
0 V ≤ VCB ≤ 30 V
IC = 100 µA; VCB = 0 V
IC = 10 µA
IB = 100 µA; IC = 1 mA
VCB = 40 V
VCB = 0 V; fO = 10 Hz
IC = 1 mA; fO = 100 Hz
fO = 1 kHz5
IC = 1 mA; VCE = 10 V
VCB = 15 V; IE = 0
f = 1 MHz
VBE = 0 V; IC = 0
f = 1 MHz
400 800
0.5 2
50 200
5
25
50 100
0.4 0.6
125 250
0.6 5
40
0.03 0.06
5
2
3
1.8 2.5
1.8 2.5
300
10
40
300 600
1
4
%
100 400 µV
10 50 µV
100 200 µV
0.4 0.6 Ω
165 330 nA
2
13 nA
40
V
0.03 0.06 V
5
2
4
1.8 3
1.8 3
pA
nV/√Hz
nV/√Hz
nV/√Hz
300
MHz
10
pF
40
pF
NOTES
1Current gain measured at IC = 10 µA, 100 µA and 1 mA.
2Current gain match is defined as:
∆hFE
= 100(∆IB )(hFE MIN )
IC
3Measured at IC = 10 µA and guaranteed by design over the specified range of IC.
4Guaranteed by design.
5Sample tested.
Specifications subject to change without notice.
–2–
REV. D
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