TSMF1030(2008) Просмотр технического описания (PDF) - Vishay Semiconductors
Номер в каталоге
Компоненты Описание
производитель
TSMF1030
(Rev.:2008)
(Rev.:2008)
Vishay Semiconductors
TSMF1030 Datasheet PDF : 9 Pages
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TSMF1000, TSMF1020, TSMF1030
Vishay Semiconductors High Speed Infrared Emitting Diode, RoHS
Compliant, 890 nm, GaAlAs Double Hetero
BASIC CHARACTERISTICS
Tamb = 25 °C, unless otherwise specified
10 000
tp/T = 0.005
0.01
1000
100 0.2
0.5
DC
10
0.1
Tamb < 60 °C
0.02
0.05
1
0.01
0.1
1
10
100
95 9985
t p - Pulse Length (ms)
Fig. 3 - Pulse Forward Current vs. Pulse Duration
1000
100
10
1
0.1
10 0
94 8007
10 1
10 2
10 3
10 4
IF - Forward Current (mA)
Fig. 6 - Radiant Power vs. Forward Current
104
103
102
101
100
0
1
2
3
4
94 8880
VF - Forward Voltage (V)
Fig. 4 - Forward Current vs. Forward Voltage
1.6
1.2
IF = 20 mA
0.8
0.4
0
- 10 0 10
50
100
140
94 7993
Tamb - Ambient Temperature (°C)
Fig. 7 - Rel. Radiant Intensity/Power vs. Ambient Temperature
1000
100
10
1
0.1
100
101
102
103
104
16189
IF - Forward Current (mA)
Fig. 5 - Radiant Intensity vs. Forward Current
1.25
1.0
0.75
0.5
0.25
0
800
20082
900
λ - Wavelength (nm)
1000
Fig. 8 - Relative Radiant Power vs. Wavelength
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For technical questions, contact: emittertechsupport@vishay.com
Document Number: 81061
Rev. 1.7, 04-Sep-08
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