D2007 Просмотр технического описания (PDF) - Semelab - > TT Electronics plc

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Компоненты Описание

производитель

D2007

METAL GATE RF SILICON FET

Semelab - > TT Electronics plc  

MECHANICAL DATA

A

B

C

1

4

M

2

D

3

E

F

G

HK

PIN 1

PIN 3

SOURCE

SOURCE

IJ

DA

PIN 2 DRAIN

PIN 4 GATE

TetraFET

D2007UK

METAL GATE RF SILICON FET

GOLD METALLISED

MULTI-PURPOSE SILICON

DMOS RF FET

5W – 28V – 400MHz

SINGLE ENDED

FEATURES

• SIMPLIFIED AMPLIFIER DESIGN

• SUITABLE FOR BROAD BAND APPLICATIONS

• LOW Crss

• SIMPLE BIAS CIRCUITS

• LOW NOISE

• HIGH GAIN – 13 dB MINIMUM

APPLICATIONS

• VHF/UHF COMMUNICATIONS

from DC to 500 MHz

ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated)

PD

Power Dissipation

29W

BVDSS

Drain – Source Breakdown Voltage

65V

BVGSS

Gate – Source Breakdown Voltage

±20V

ID(sat)

Drain Current

2A

Tstg

Storage Temperature

–65 to 150°C

Tj

Maximum Operating Junction Temperature

200°C

Semelab plc. Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612.

Prelim. 2/98

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