FreescalMeCS34e1m29iMcCo3n3d1u29ctor, Inc.
Figure 24. Current Sensing Power MOSFET
8
1.25V
9
+
–
10
11
Vin
VRS ≈
RS ⋅ Ipk ⋅ rDS(on)
rDM(on) + rS
If: SENSEFET = MTP10N10M
RS = 200
Then: VRS ≈ 0.075 Ipk
D
SENSEFET
1
S
GM K
2
3
RS
1/4W
Control Circuitry Ground:
To Pin 7
Power Ground:
To Input Source
Return
Virtually lossless current sensing can be achieved with the implementation of a
SENSEFET power switch.
Figure 25. Current Waveform Spike Suppression
Vin
Q1
1
2
3
R
C RS
The addition of the RC filter will eliminate instability caused by the
leading edge spike on the current waveform.
Figure 26. MOSFET Parasitic Oscillations
Vin
Q1
1 Rg
2
3
RS
Series gate resistor Rg will damp any high frequency parasitic
oscillations caused by the MOSFET input capacitance and any
series wiring inductance in the gate–source circuit.
Figure 27. Bipolar Transistor Drive
IB
+
0
–
1
2
Vin
t
Base Charge
Removal
C1
Q1
3
RS
The totem–pole output can furnish negative base current for enhanced
transistor turn–off, with the addition of capacitor C1.
12
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