DatasheetQ Logo
Electronic component search and free download site. Transistors,MosFET ,Diode,Integrated circuits

RF2422PCBA-41X Просмотр технического описания (PDF) - RF Micro Devices

Номер в каталоге
Компоненты Описание
производитель
RF2422PCBA-41X
RFMD
RF Micro Devices RFMD
RF2422PCBA-41X Datasheet PDF : 9 Pages
1 2 3 4 5 6 7 8 9
RF2422
Absolute Maximum Ratings
Parameter
Supply Voltage
Input LO and RF Levels
Operating Ambient Temperature
Storage Temperature
Rating
-0.5 to +7.5
+10
-40 to +85
-40 to +150
Unit
VDC
dBm
°C
°C
Caution! ESD sensitive device.
Exceeding any one or a combination of the Absolute Maximum Rating conditions may
cause permanent damage to the device. Extended application of Absolute Maximum
Rating conditions to the device may reduce device reliability. Specified typical perfor-
mance or functional operation of the device under Absolute Maximum Rating condi-
tions is not implied.
RoHS status based on EUDirective2002/95/EC (at time of this document revision).
The information in this publication is believed to be accurate and reliable. However, no
responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any
infringement of patents, or other rights of third parties, resulting from its use. No
license is granted by implication or otherwise under any patent or patent rights of
RFMD. RFMD reserves the right to change component circuitry, recommended appli-
cation circuitry and specifications at any time without prior notice.
Parameter
Carrier Input
Frequency Range
Power Level
Input VSWR
Modulation Input
Frequency Range
Reference Voltage (VREF)
Maximum Modulation (I&Q)
Gain Asymmetry
Quadrature Phase Error
Input Resistance
Input Bias Current
RF Output
Output Power
Output Impedance
Output VSWR
Harmonic Output
Sideband Suppression
Carrier Suppression
IM3 Suppression
Broadband Noise Floor
Power Down
Turn On/Off Time
PD Input Resistance
Power Control “ON”
Power Control “OFF”
Specification
Min.
Typ.
Max.
800
2500
-6
+6
5:1
1.8:1
1.2:1
Unit
MHz
dBm
Condition
T=25°C, VCC=5V
At 900MHz
At 1800MHz
At 2500MHz
DC
250
MHz
2.0
3.0
V
VREF ± 1.0
V
0.2
dB
3
°
30
k
40
A
LO=2GHz and -5dBm, I&Q=2.0VPP, SSB
-3
+3
dBm
50
3.5:1
At 900MHz
1.3:1
1.15:1
-30
-35
25
35
30
35
30
35
At 2000MHz
At 2500MHz
dBc
dB
dB
dB
Intermodulation of the carrier and the desired
RF signal
25
30
-145
-152
dB
dBm/Hz
dBm/Hz
Intermodulation of baseband signals
At 20MHz offset, VCC=5V.
Tied to VREF: ISIG, QSIG, IREF, and QREF.
At 850MHz
At 1900MHz
100
ns
50
k
2.8
V
Threshold voltage
1.0
1.2
V
Threshold voltage
2 of 9
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
DS121024

Share Link: 

datasheetq.com  [ Privacy Policy ]Request Datasheet ] [ Contact Us ]