HSU88 Просмотр технического описания (PDF) - Hitachi -> Renesas Electronics

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HSU88

Silicon Schottky Barrier Diode for Various Detector, Mixer

Hitachi -> Renesas Electronics 

HSU88

Absolute Maximum Ratings (Ta = 25°C)

Item

Symbol

Reverse voltage

VR

Average rectified current IO

Junction temperature

Tj

Storage temperature

Tstg

Value

Unit

10

V

15

mA

125

°C

-55 to +125

°C

Electrical Characteristics (Ta = 25°C)

Item

Forward voltage

Reverse current

Capacitance

ESD-Capability*1

Symbol Min Typ Max

VF1

350  420

VF2

500  580

I R1

  0.2

I R2

  10

C

  0.8



30  

Notes 1. Failure criterion ; IR ≥ 400nA at VR =2 V

Unit

mV

µA

pF

V

Test Condition

IF = 1 mA

IF = 10 mA

VR = 2V

VR = 10V

VR = 0V, f = 1 MHz

C = 200pF , Both forward and reverse

direction 1 pulse.

2

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