STM6920A Просмотр технического описания (PDF) - Weitron Technology
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STM6920A Datasheet PDF : 6 Pages
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WT6920AM
Electrical Characteristics (TA=25 C Unless otherwise noted)
Characteristic
Static (2)
Drain-Source Breakdown Voltage
VGS=0V, ID=250µA
Gate-Source Threshold Voltage
VDS=VGS, ID=250µA
Gate-Source Leakage Current
VDS=0V, VGS=-+20V
Zero Gate Voltage Drain Current
VDS=32V, VGS=0V
Drain-Source On-Resistance
VGS=10V, ID=6A
VGS=4.5V, ID=5A
On-State Drain Current
VDS=5V, VGS=10V
Symbol
V(BR)DSS
VGS (th)
IGSS
IDSS
rDS (on)
ID(on)
Min
40
1
-
-
-
-
15
Typ
-
1.8
-
-
24
45
-
Forward Transconductance
VDS=5V, ID=6A
Dynamic(3)
Input Capacitance
VDS=25V, VGS=0V, f=1MHZ
Output Capacitance
VDS=25V, VGS=0V, f=1MHZ
Reverse Transfer Capacitance
VDS=25V, VGS=0V, f=1MHZ
gfs
-
10
Ciss
-
759
Coss
-
92
Crss
-
70
Switching (3)
Turn-On Delay Time
VGS =10V,VDD =20V, ID=1A, RGEN=3.3Ω
Rise Time
VGS =10V,VDD =20V, ID=1A, RGEN=3.3Ω
Turn-Off Time
VGS =10V,VDD =20V, ID=1A, RGEN=3.3Ω
Fall Time
VGS =10V,VDD =20V, ID=1A, RGEN=3.3Ω
Total Gate Charge
VDS=20V, ID=6A,VGS =10V
VDS=20V, ID=6A,VGS =4.5V
td(on)
-
9.2
tr
-
21
td(off )
-
15.5
tf
-
4.4
Qg
-
15.9
-
7.6
Gate-Source Charge
VDS=20V, VGS=10V, ID=6A
Gate-Drain Charge
VDS=20V, VGS=10V, ID=6A
Drain-Source Diode Forward Voltage
VGS=0V, IS=1.7A
Qgs
-
2.2
Qgd
-
4.8
VSD
-
0.8
Note: 1. Surface Mounted on FR4 Board t <_ 10sec.
2. Pulse Test : PW<_ 300us, Duty Cycle <_ 2%.
3. Guaranteed by Design, not Subject to Production Testing.
WEITRON
2/6
http://www.weitron.com.tw
Max
-
3
-+100
1
35
62
-
-
Unit
V
V
nA
uA
mΩ
A
S
-
-
PF
-
-
-
nS
-
-
-
-
-
nc
-
1.2
V
02-Aug-05
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