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BYM13-20 Просмотр технического описания (PDF) - General Semiconductor

Номер в каталоге
Компоненты Описание
производитель
BYM13-20
GE
General Semiconductor GE
BYM13-20 Datasheet PDF : 2 Pages
1 2
RATINGS AND CHARACTERISTIC CURVES BYM13-20 THRU BYM13-60, SGL41-20 THRU SGL41-60
1.0
0.75
0.50
FIG. 1 - FORWARD CURRENT DERATING CURVE
SGL41-20 - SGL41-40
RESISTIVE OR
INDUCTIVE LOAD
SGL41-50 & SGL41-60
P.C.B. MOUNTED
on 0.24 x 0.24”
(6.0 x 6.0mm)
COPPER LAND
AREAS
FIG. 2 - MAXIMUM NON-REPETITIVE PEAK FORWARD
SURGE CURRENT
30
AT RATED Td
8.3ms SINGLE HALF SINE-WAVE
(JEDEC Method)
25
20
15
0.25
10
0
0
25
50
75
100 125 150 175
TERMINAL TEMPERATURE, °C
FIG. 3 - TYPICAL INSTANTANEOUS FORWARD
CHARACTERISTICS
50
10.0
TJ=125°C
TJ=150°C
PULSE WIDTH = 300µs
1% DUTY CYCLE
1
TJ=25°C
5.0
1
10
100
NUMBER OF CYCLES AT 60 Hz
FIG. 4 - TYPICAL REVERSE CHARACTERISTICS
100
SGL41-20 - SGL41-40
SGL41-50 & SGL41-60
10
TJ=125°C
1
0.1
TJ=75°C
0.1
0.01
0.01
0
SGL41-20 - SGL41-40
SGL41-50 & SGL41-60
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
INSTANTANEOUS FORWARD VOLTAGE,
VOLTS
0.001
0
FIG. 5 - TYPICAL JUNCTION CAPACITANCE
400
TJ=25°C
f=1.0 MHz
Vsig=50mVp-p
100
SGL41-20 -SGL41-40
SGL41-50 & SGL41-60
TJ=25°C
20
40
60
80
100
PERCENT OF RATED PEAK REVERSE
VOLTAGE, %
10
0.1
1
10
REVERSE VOLTAGE, VOLTS
40
100

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