F1S60P03 Просмотр технического описания (PDF) - Fairchild Semiconductor
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F1S60P03 Datasheet PDF : 8 Pages
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RFG60P03, RFP60P03, RF1S60P03SM
Data Sheet
January 2002
60A, 30V, 0.027 Ohm, P-Channel Power
MOSFETs
These P-Channel power MOSFETs are manufactured using
the MegaFET process. This process, which uses feature
sizes approaching those of LSI integrated circuits gives
optimum utilization of silicon, resulting in outstanding
performance. They were designed for use in applications
such as switching regulators, switching converters, motor
drivers and relay drivers. These transistors can be operated
directly from integrated circuits.
Formerly developmental type TA49045.
Ordering Information
PART NUMBER
PACKAGE
BRAND
RFG60P03
TO-247
RFG60P03
RFP60P03
TO-220AB
RFP60P03
RF1S60P03SM
TO-263AB
F1S60P03
NOTE: When ordering, use the entire part number. Add the suffix 9A to
obtain the TO-263AB variant in tape and reel, i.e. RF1S60P03SM9A.
Packaging
JEDEC STYLE TO-247
DRAIN
(BOTTOM
SIDE METAL)
SOURCE
DRAIN
GATE
Features
• 60A, 30V
• rDS(ON) = 0.027Ω
• Temperature Compensating PSPICE® Model
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
• 175oC Operating Temperature
• Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
Symbol
D
G
S
DRAIN
(FLANGE)
JEDEC TO-220AB
SOURCE
DRAIN
GATE
JEDEC TO-263AB
GATE
SOURCE
DRAIN
(FLANGE)
©2002 Fairchild Semiconductor Corporation
RFG60P03, RFP60P03, RF1S60P03SM Rev. B
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