RA20H8087M-E01 Просмотр технического описания (PDF) - Mitsumi
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RA20H8087M-E01 Datasheet PDF : 10 Pages
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ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
MITSUBISHI RF POWER MODULE
RA20H8087M
TYPICAL PERFORMANCE (Tcase=+25°C, ZG=ZL=50Ω, unless otherwise specified)
OUTPUT POWER, TOTAL EFFICIENCY,
and INPUT VSWR versus FREQUENCY
60
60
50
Pout @VGG=5V
50
40
40
30
ηT @P out=20W
30
20
V DD=12.5V
20
P in =50mW
10
ρ in @P out=20W
10
0
0
750 770 790 810 830 850 870
FREQUENCY f(MHz)
2nd, 3rd HARMONICS versus FREQUENCY
-20
VDD=12.5V
-30
Pin=50mW
-40
-50
2nd @ Pout=20W
-60
3rd @ Pout=20W
-70
750 770 790 810 830 850 870
FREQUENCY f(MHz)
OUTPUT POWER, POWER GAIN and
DRAIN CURRENT versus INPUT POWER
60
24
50
Gp
40
Pout
20
16
30
12
20
10
0
-15 -10 -5
IDD
05
8
f=764MHz,
VDD=12.5V, 4
VGG=5V
0
10 15 20
INPUT POWER Pin(dBm)
OUTPUT POWER, POWER GAIN and
DRAIN CURRENT versus INPUT POWER
60
24
50
Gp
40
P out
20
16
30
12
20
10
0
-15
I DD
8
-10 -5 0
f=806MHz,
VDD=12.5V, 4
V GG =5V
0
5 10 15 20
INPUT POWER P in(dBm)
OUTPUT POWER, POWER GAIN and
DRAIN CURRENT versus INPUT POWER
60
24
50
Gp
Pout
20
40
16
30
12
20
I DD
8
10
0
-15 -10 -5 0
f=825MHz,
VDD=12.5V, 4
V GG=5V
0
5 10 15 20
INPUT POWER Pin(dBm)
OUTPUT POWER, POWER GAIN and
DRAIN CURRENT versus INPUT POWER
60
24
50
Gp
40
Pout
20
16
30
12
20
IDD
8
10
0
-15 -10 -5 0
f=851MHz,
VDD=12.5V, 4
V GG=5V
0
5 10 15 20
INPUT POWER Pin(dBm)
OUTPUT POWER, POWER GAIN and
DRAIN CURRENT versus INPUT POWER
60
24
50
Gp
40
Pout
20
16
30
12
20
IDD
8
10
0
-15 -10 -5 0
f=870MHz,
VDD=12.5V, 4
V GG=5V
0
5 10 15 20
INPUT POWER Pin(dBm)
RA 20H8087M
MITSUBISHI ELECTRIC
3/10
25 April 2003
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