PM75CSD120 Просмотр технического описания (PDF) - Mitsumi
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PM75CSD120 Datasheet PDF : 8 Pages
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DIODE FORWARD CHARACTERISTICS
(TYPICAL)
102
VD = 15V
7
Tj = 25°C
5
4
Tj = 125°C
3
2
101
7
5
4
3
2
100
0
0.5
1
1.5
2
2.5
EMITTER-COLLECTOR VOLTAGE VEC (V)
ID VS. fc CHARACTERISTICS
(TYPICAL)
100
VD = 15V
Tj = 25°C
80
N-side
60
40
P-side
20
0
0
5
10 15 20 25
CARRIER FREQUENCY fc (kHz)
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(FWDi PART)
101
7
5
3
2
100
7
5
3
2
10–1
7
5
3
2
10–2
7
5
3 Single Pulse
2 Per unit base = Rth(j – c)F = 0.47°C/ W
10–3
10–32 3 5 710–22 3 5 710–12 3 5 7100 2 3 5 7101
TIME (s)
MITSUBISHI <INTELLIGENT POWER MODULES>
PM75CSD120
FLAT-BASE TYPE
INSULATED PACKAGE
DIODE REVERSE RECOVERY CHARACTERISTICS
(TYPICAL)
100
102
7
7
5
Irr 5
4
4
3
3
2
2
10–1
7
5
4
3
2
10–2
100
trr
101
7
VCC = 600V
5
4
VD = 15V
3
Tj = 25°C
Tj = 125°C 2
Inductive load
100
2 3 4 5 7 101 2 3 4 5 7 102
COLLECTOR RECOVERY CURRENT –IC (A)
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(IGBT PART)
101
7
5
3
2
100
7
5
3
2
10–1
7
5
3
2
10–2
7
5
3 Single Pulse
2 Per unit base = Rth(j – c)Q = 0.30°C/ W
10–3
10–32 3 5 710–22 3 5 710–12 3 5 7100 2 3 5 7101
TIME (s)
Jul. 2005
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