PBSS3515E Просмотр технического описания (PDF) - NXP Semiconductors.
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PBSS3515E Datasheet PDF : 12 Pages
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NXP Semiconductors
8. Test information
PBSS3515E
15 V, 0.5 A PNP low VCEsat (BISS) transistor
−IB
90 %
10 %
−IC
90 %
−IBon (100 %)
input pulse
(idealized waveform)
− I Boff
output pulse
(idealized waveform)
−IC (100 %)
10 %
td
tr
t on
Fig 12. BISS transistor switching time definition
ts
t off
t
tf
006aaa266
VBB
VCC
(probe)
oscilloscope
450 Ω
VI
RB
R2
R1
RC
Vo (probe)
oscilloscope
450 Ω
DUT
mgd624
VCC = −11 V; IC = −250 mA; IBon = −12.5 mA; IBoff = 12.5 mA
Fig 13. Test circuit for switching times
PBSS3515E_2
Product data sheet
Rev. 02 — 27 April 2009
© NXP B.V. 2009. All rights reserved.
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