PBSS2515E Просмотр технического описания (PDF) - NXP Semiconductors.

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PBSS2515E

15 V, 0.5 A NPN low VCEsat (BISS) transistor

NXP Semiconductors. 

PBSS2515E

15 V, 0.5 A NPN low VCEsat (BISS) transistor

Rev. 02 — 21 April 2009

Product data sheet

1. Product profile

1.1 General description

NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in an ultra small

SOT416 (SC-75) Surface-Mounted Device (SMD) plastic package.

PNP complement: PBSS3515E.

1.2 Features

I Low collector-emitter saturation voltage VCEsat

I High collector current capability IC and ICM

I High collector current gain (hFE) at high IC

I High efficiency due to less heat generation

I Smaller required Printed-Circuit Board (PCB) area than for conventional transistors

1.3 Applications

I DC-to-DC conversion

I MOSFET gate driving

I Motor control

I Charging circuits

I Low power switches (e.g. motors, fans)

I Portable applications

1.4 Quick reference data

Table 1.

Symbol

VCEO

IC

ICM

Quick reference data

Parameter

collector-emitter voltage

collector current

peak collector current

RCEsat

collector-emitter

saturation resistance

[1] Pulse test: tp ≤ 300 µs; δ ≤ 0.02.

Conditions

open base

single pulse;

tp ≤ 1 ms

IC = 500 mA;

IB = 50 mA

Min Typ Max Unit

-

-

15

V

-

-

0.5 A

-

-

1

A

[1] -

300 500 mΩ

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