MX29F8100 Просмотр технического описания (PDF) - Macronix International

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MX29F8100

8M-BIT [1M x 8/512K x 16] CMOS SINGLE VOLTAGE FLASH MEMORY

Macronix International 

INDEX

MX29F8100

Figure 13. COMMAND WRITE TIMING WAVEFORMS(Alternate CE Controlled)

WE

tOES

tWS

OE

CE

ADDRESSES

tGHWL

tAS

tCP

tAH

VALID

tWH

tWC

tCPH

DATA

(D/Q)

HIGH Z

tDS

tDH

DIN

VCC

tVCS

PWD

tPHWL

NOTE:

1.BYTE pin is treated as Address pin. All timing specifications for BYTE pin are the same as those for address pin.

2.BYTE pin is sampled on the falling edge of WE or CE during the 3rd command write bus cycle; for real world application,

BYTE pin should be either static high(word mode) or static low(byte mode).

P/N: PM0262

REV. 2.0, JAN. 22, 1999

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