MX29F8100 Просмотр технического описания (PDF) - Macronix International

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производитель

MX29F8100

8M-BIT [1M x 8/512K x 16] CMOS SINGLE VOLTAGE FLASH MEMORY

Macronix International 

INDEX

MX29F8100

Figure 5. READ TIMING WAVEFORMS

ADDRESSES

Standby

Vcc Power-up

VIH

VIL

Device and

address selection

Outputs Enabled

ADDRESSES STABLE

VIH

CE (1)

VIL

VIH

VIL

OE

VIH

WE

VIL

DATA OUT

VOH

VOL

HIGH Z

VCC

5.0V

GND

VIH

PWD

VIL

tOE

tCE

tACC

tDPR

Data valid

Standby

Vcc Power-down

tDF

tOH

Data out valid

HIGH Z

NOTE:

1.CE is defined as the latter of CE1 or CE2 going Low or the first of CE1 or CE2 going High.

2.For real world application, BYTE pin should be either static high(word mode) or static low(byte mode);

dynamic switching of BYTE pin is not recommended.

P/N: PM0262

REV. 2.0, JAN. 22, 1999

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