MMBT4401 Просмотр технического описания (PDF) - TAITRON Components Incorporated
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MMBT4401 Datasheet PDF : 3 Pages
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SMD General Purpose Transistor (NPN)
Electrical Characteristics (T Ambient=25ºC unless noted otherwise)
MMBT4401
Symbol
Description
hFE
D.C. Current Gain
V(BR)CBO
V(BR)CEO
V(BR)EBO
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage*
Emitter-Base Breakdown Voltage
VCEsat
Collector-Emitter Saturation Voltage
VBEsat
Base-Emitter Saturation Voltage
ICEV
IBEV
hie
hre
hoe
hfe
fT
Collector Cut-off Current
Base Cut-off Current
Input Impedance
Voltage Feedback Ratio
Output Admittance
Small Signal Current Gain
Current Gain-Bandwidth Product
CCBO
Output Capacitance
CEBO
td
Input Capacitance
Delay Time
tr
Rise Time
ts
Storage Time
tf
Fall Time
*Pulse Test Pulse Width ≤ 300µs, Duty Cycle ≤2.0%
Min.
20
40
80
100
40
60
40
6.0
-
-
0.75
-
-
-
1.0
0.1
1.0
40
250
-
-
-
-
-
-
Max.
-
-
-
300
-
-
-
-
0.40
0.75
0.95
1.20
0.1
0.1
15
8.0
30
500
-
6.5
30
15
20
225
30
Unit
V
V
V
V
V
µA
µA
kΩ
x10־4
μS
MHz
pF
pF
nS
Conditions
VCE=1V, IC=0.1mA
VCE=1V, IC=1mA
VCE=1V, IC=10mA
VCE=1V, IC=150mA
VCE=2V, IC=500mA
IC=0.1mA, IE=0
IC=1mA, IB=0
IE=0.1mA, IC=0
IC=150mA, IB=15mA
IC=500mA, IB=50mA
IC=150mA, IB=15mA
IC=500mA, IB=50mA
VEB=0.4V, VCE=35V
VEB=0.4V, VCE=35V
VCE=10V, IC=1mA
f=1KHz,
VCE=10V, IC=1mA
f=1KHz,
VCE=10V, IC=1mA
f=1KHz,
VCE=10V, IC=1mA
f=1KHz,
VCE=10V, IC=20mA,
f=100MHz
VCB=5V, f=1.0MHz,
IE=0
VEB=0.5V, f=1.0MHz,
IC=0
IB1=15mA
IC=150mA
VCC=30V
VEB=2V
IB1=IB2=15mA
IC=150mA
VCC=30V
www.taitroncomponents.com
Rev. A/AH 2008-03-25
Page 2 of 3
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