MMBF0201NLT1 Просмотр технического описания (PDF) - ON Semiconductor
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MMBF0201NLT1 Datasheet PDF : 5 Pages
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MMBF0201NLT1
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
(VGS = 0 Vdc, ID = 10 mA)
Zero Gate Voltage Drain Current
(VDS = 16 Vdc, VGS = 0 Vdc)
(VDS = 16 Vdc, VGS = 0 Vdc, TJ = 125°C)
Gate−Body Leakage Current (VGS = ± 20 Vdc, VDS = 0)
ON CHARACTERISTICS (Note 1)
Gate Threshold Voltage
(VDS = VGS, ID = 250 mAdc)
Static Drain−to−Source On−Resistance
(VGS = 10 Vdc, ID = 300 mAdc)
(VGS = 4.5 Vdc, ID = 100 mAdc)
Forward Transconductance (VDS = 10 Vdc, ID = 200 mAdc)
DYNAMIC CHARACTERISTICS
Input Capacitance
(VDS = 5.0 V)
Output Capacitance
(VDS = 5.0 V)
Transfer Capacitance
(VDG = 5.0 V)
SWITCHING CHARACTERISTICS (Note 2)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
(VDD = 15 Vdc, ID = 300 mAdc,
RL = 50 W)
Fall Time
Gate Charge (See Figure 5)
SOURCE−DRAIN DIODE CHARACTERISTICS
Continuous Current
Pulsed Current
Forward Voltage (Note 2)
1. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%.
2. Switching characteristics are independent of operating junction temperature.
Symbol
V(BR)DSS
IDSS
IGSS
VGS(th)
rDS(on)
gFS
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
QT
IS
ISM
VSD
Min
Typ
Max
Unit
20
−
−
Vdc
mAdc
−
−
1.0
−
−
10
−
−
±100
nAdc
1.0
1.7
2.4
Vdc
W
−
0.75
1.0
−
1.0
1.4
−
450
−
mMhos
−
45
−
pF
−
25
−
−
5.0
−
−
2.5
−
ns
−
2.5
−
−
15
−
−
0.8
−
−
1400
−
pC
−
−
0.3
A
−
−
0.75
−
0.85
−
V
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