MG600Q2YS60A Просмотр технического описания (PDF) - Mitsumi
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MG600Q2YS60A Datasheet PDF : 9 Pages
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MG600Q2YS60A
trr, Irr – IF
1000
trr
100
Irr
Common cathode
di / dt = 2000A / s
VGE = 10V VCC = 600V
: Tj = 25°C
: Tj = 125°C
10
0
100
200
300
400
500
600
Forward crrent IF (A)
Edsw – IF
10
1
Common cathode
di / dt = 2000A / s
VGE = 10V
VCC = 600V
: Tj = 25°C
: Tj = 125°C
1
0
100
200
300
400
500
600
Forward crrent IF (A)
500000
300000
C – VCE
100000
30000
Cies
10000
Coes
3000
Common emitter
1000 VGE = 0
f = 1MHz
300 Tj = 25°C
0.01 0.03 0.1 0.3
Cres
1
3
10 30 100
Collector-emitter voltage VCE (V)
1
Tc = 25°C
Rth(j-c) – tw
0.1
Diode stage
0.01
Transistor stage
0.001
0.0005
0.001
0.01
0.1
1
10
Pulse width tw (s)
Short Circuit Soa
5000
4000
3000
2000
RG = 7.5Ω
1000 VGE = ±15V
Tj 125°C
0 tw 10 s
0
400
800
1200
Collector-emitter voltage VCE (V)
1600
20
VCC = 950V
VGE =±15V
Tj = 25°C
15
Short Circuit
tw – RG
10
5
0
4
8
12
16
20
Gate resistance RG ( )
2004-10-01 7/9
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