MBR10100-M3/4W Просмотр технического описания (PDF) - Vishay Semiconductors
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Компоненты Описание
производитель
MBR10100-M3/4W Datasheet PDF : 4 Pages
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New Product
MBR1090, MBR10100
Vishay General Semiconductor
100
TJ = 150 °C
10
TJ = 125 °C
1
0.1
TJ = 25 °C
0.01
0
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
Instantaneous Forward Voltage (V)
Figure 3. Typical Instantaneous Forward Characteristics
10 000
1000
TJ = 25 °C
f = 1.0 MHz
Vsig = 50 mVp-p
100
10
1
10
100
Reverse Voltage (V)
Figure 5. Typical Junction Capacitance
100
TJ = 150 °C
10
TJ = 125 °C
1
100
Junction to Case
10
0.1
0.01
0.001
10
TJ = 25 °C
20 30 40 50 60 70 80 90 100
Percent of Rated Peak Reverse Voltage (%)
Figure 4. Typical Reverse Characteristics
1
0.1
0.01
MBR
0.1
1
10
100
t - Pulse Duration (s)
Figure 6. Typical Transient Thermal Impedance
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
TO-220AC
0.415 (10.54)MAX.
0.370 (9.40)
0.360 (9.14)
0.154 (3.91) DIA.
0.148 (3.74)
0.113 (2.87)
0.103 (2.62)
0.145 (3.68)
0.135 (3.43)
0.160 (4.06)
0.140 (3.56)
PIN
1
2
0.635 (16.13)
0.625 (15.87)
0.350 (8.89)
0.330 (8.38)
1.148 (29.16)
1.118 (28.40)
0.057 (1.45)
0.045 (1.14)
0.105 (2.67)
0.095 (2.41)
PIN 1
PIN 2
0.037 (0.94)
0.027(0.68)
0.205 (5.20)
0.195 (4.95)
CASE
0.560 (14.22)
0.530 (13.46)
0.022 (0.56)
0.014 (0.36)
0.185 (4.70)
0.175 (4.44)
0.055 (1.39)
0.045 (1.14)
0.603 (15.32)
0.573 (14.55)
0.110 (2.79)
0.100 (2.54)
Document Number: 89193
For technical questions within your region, please contact one of the following:
Revision: 30-Nov-10
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
www.vishay.com
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