MBR10100-M3/4W Просмотр технического описания (PDF) - Vishay Semiconductors
Номер в каталоге
Компоненты Описание
производитель
MBR10100-M3/4W Datasheet PDF : 4 Pages
| |||
MBR1090, MBR10100
Vishay General Semiconductor
New Product
ELECTRICAL CHARACTERISTICS (TC = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL
Maximum instantaneous forward voltage
IF = 10 A
IF = 20 A
TC = 25 °C
TC = 125 °C
VF (1)
Maximum reverse current per diode
at working peak reverse voltage
TJ = 25 °C
TJ = 100 °C
IR (2)
Notes
(1) Pulse test: 300 µs pulse width, 1 % duty cycle
(2) Pulse test: Pulse width ≤ 40 ms
VALUE
0.80
0.65
0.75
100
6.0
THERMAL CHARACTERISTICS (TC = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
MBR1090
RθJA
60
Typical thermal resistance
RθJC
2.0
MBR10100
UNIT
V
µA
mA
UNIT
°C/W
ORDERING INFORMATION (Example)
PACKAGE
PREFERRED P/N
UNIT WEIGHT (g)
TO-220AC
MBR10100-M3/4W
1.845
PACKAGE CODE BASE QUANTITY DELIVERY MODE
4W
50/tube
Tube
RATINGS AND CHARACTERISTICS CURVES
(TA = 25 °C unless otherwise noted)
10
Resistive or Inductive Load
8
6
4
2
0
0
50
100
150
Case Temperature (°C)
Figure 1. Forward Current Derating Curve
160
TJ = TJ max.
8.3 ms Single Half Sine-Wave
140
120
100
80
60
40
1
10
100
Number of Cycles at 60 Hz
Figure 2. Maximum Non-Repetitive Peak Forward Surge Current
www.vishay.com
2
For technical questions within your region, please contact one of the following:
Document Number: 89193
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
Revision: 30-Nov-10
Share Link: 