M2S56D20AKT Просмотр технического описания (PDF) - Mitsumi

Номер в каталоге

Компоненты Описание

производитель

M2S56D20AKT

256M Double Data Rate Synchronous DRAM

Mitsumi 

DDR SDRAM (Rev.1.0)

Jul. '01 Preliminary

ABSOLUTE MAXIMUM RATINGS

Symbol

Vdd

VddQ

VI

VO

IO

Pd

Topr

Tstg

Parameter

Supply Voltage

Supply Voltage for Output

Input Voltage

Output Voltage

Output Current

Power Dissipation

Operating Temperature

Storage Temperature

MITSUBISHI LSIs

M2S56D20/ 30/ 40AKT

256M Double Data Rate Synchronous DRAM

Conditions

with respect to Vss

with respect to VssQ

with respect to Vss

with respect to VssQ

Ta = 25 oC

Ratings

Unit

-0.5 ~ 3.7

V

-0.5 ~ 3.7

V

-0.5 ~ Vdd+0.5

V

-0.5 ~ VddQ+0.5

V

50

mA

1000

mW

0 ~ 70

oC

-65 ~ 150

oC

DC OPERATING CONDITIONS

(Ta=0 ~ 70oC, unless otherwise noted)

Symbol

Parameter

Min.

Limits

Typ.

Max.

Unit Notes

Vdd

Supply Voltage

2.3

2.5

2.7

V

VddQ

Supply Voltage for Output

2.3

2.5

2.7

V

Vref

Input Reference Voltage

0.49*VddQ 0.50*VddQ 0.51*VddQ V

5

VIH(DC)

High-Level Input Voltage

Vref + 0.15

VddQ+0.3 V

VIL(DC)

Low-Level Input Voltage

-0.3

Vref - 0.15 V

VIN(DC) Input Voltage Level, CLK and /CLK

-0.3

VddQ + 0.3 V

VID(DC) Input Differential Voltage, CLK and /CLK

0.36

VddQ + 0.6 V

7

VTT

I/O Termination Voltage

Vref - 0.04

Vref + 0.04 V

6

CAPACITANCE

(Ta=0 ~ 70oC, Vdd = VddQ = 2.5V + 0.2V, Vss = VssQ = 0V, unless otherwise noted)

Symbol

CI(A)

CI(C)

CI(K)

CI/O

Parameter

Input Capacitance, address pin

Input Capacitance, control pin

Input Capacitance, CLK pin

I/O Capacitance, I/O, DQS, DM pin

Test Condition

VI=1.25v

f=100MHz

VI=25mVrms

Limits

Delta

Unit

Min. Max. Cap.(Max.)

2.0 3.0

pF

0.50

2.0 3.0

pF

2.0 3.0

0.25

pF

4.0 5.0

0.50

pF

Notes

11

11

11

11

MITSUBISHI ELECTRIC

16

Share Link: