DatasheetQ Logo
Electronic component search and free download site. Transistors,MosFET ,Diode,Integrated circuits

LTC4150IMS Просмотр технического описания (PDF) - Linear Technology

Номер в каталоге
Компоненты Описание
производитель
LTC4150IMS
Linear
Linear Technology Linear
LTC4150IMS Datasheet PDF : 14 Pages
1 2 3 4 5 6 7 8 9 10 Next Last
LTC4150
ELECTRICAL CHARACTERISTICS The l denotes the specifications which apply over the full operating
temperature range, otherwise specifications are at TA = 25°C. VDD = 2.7V and 8.5V unless otherwise noted.
SYMBOL PARAMETER
CONDITIONS
MIN
TYP
MAX
Power Supply Current
IDD
IDD(SD)
Supply Current, Operating
Supply Current, Shutdown
VDD = 8.5V
VDD = 2.7V
VDD = 8.5V
VDD = 5.5V
VDD = 2.7V
l
115
140
l
80
100
l
10
22
l
10
l
1.5
AC Characteristics
GVF
Voltage to Frequency Gain
ΔGVF(VDD)
ΔGVF(TEMP)
INL
Gain Variation with Supply
Gain Variation with Temperature
Integral Nonlinearity
tCLR
CLR Pulse Width to Reset INT,
INT and CLR Not Connected
tINT
INT Low Time, INT Connected to CLR
VSENSE = 50mV to –50mV,
2.7V ≤ VDD ≤ 8.5V
2.7V ≤ VDD ≤ 8.5V
(Note 2)
Figure 2
Figure 3, CL = 15pF
32.0
32.55
33.1
l 31.8
33.3
0
0.5
l –0.03
0.03
–0.4
0.4
l –0.5
0.5
20
l
1
UNITS
μA
μA
μA
μA
μA
Hz/V
Hz/V
%/V
%/ºC
%
%
μs
μs
Note 1: Stresses beyond those listed under Absolute Maximum Ratings
may cause permanent damage to the device. Exposure to any Absolute
Maximum Rating condition for extended periods may affect device
reliability and lifetime.
Note 2: Guaranteed by design and not tested in production.
Note 3: Measured at least 20ms after power on.
Note 4: Tested in feedback loop to SENSE+ and SENSE.
4150fc
3

Share Link: 

datasheetq.com  [ Privacy Policy ]Request Datasheet ] [ Contact Us ]