KSC2334 Просмотр технического описания (PDF) - Tiger Electronic

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производитель

KSC2334

NPN Epitaxial Silicon Transistor

Tiger Electronic 

TIGER ELECTRONIC CO.,LTD

NPN Epitaxial Silicon Transistor

Product specification

KSC2334

DESCRIPTION

High Speed Switching Industrial Use

◆ Complement to KSA1010

ABSOLUTE MAXIMUM RATINGS ( Ta = 25 OC)

Parameter

Symbol Value Unit

Collector-Base Voltage

VCBO

150 V

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current

Base Current

Total Dissipation at

Max. Operating Junction Temperature

Storage Temperature

VCEO

VEBO

IC

IB

Ptot

Tj

Tstg

100 V

7

V

7.0 A

3.5 A

40 W

-5155~015 oC

0

oC

TO-220

ELECTRICAL CHARACTERISTICS ( Ta = 25 OC)

Parameter

Symbol Test Conditions

Collector Cut-off Current

ICEO VCB=100V, IE=0

Emitter Cut-off Current

IEBO VEB=5V, IC=0

Collector-Emitter Sustaining Voltage

DC Current Gain

Collector-Emitter Saturation Voltage

Base-Emitter Saturation Voltage

VCEO

hFE(1)

hFE(2)

hFE(3)

VCE(sat)

VBE(sat)

IC=30mA, IB=0

VCE=5.0V, IC=0.5A

VCE=5.0V, IC=3.0A

VCE=5.0V, IC=5.0A

IC=5.0A,IB=500mA

IC=5.0A,IB=500mA

Storage Time

tS

IB1 = -IB2 = 0.5A RL = 10Ω

hFE(2) R: 40 ~ 80 O: 70 ~ 140 Y: 120 ~ 240

Min.

—

—

100

40

40

20

—

—

—

Typ.

—

—

—

—

—

—

—

—

0.5

Max. Unit

10 μA

10 μA

—

V

—

240

—

0.5 V

1.5 V

— μs

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