IXFT21N50Q Просмотр технического описания (PDF) - IXYS CORPORATION
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производитель
IXFT21N50Q Datasheet PDF : 4 Pages
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IXFH 21N50Q
IXFT 21N50Q
Fig. 7. Input Adm ittance
35
30
25
20
15
TJ = 125ºC
10
25ºC
-40ºC
5
0
3.5
4
4.5
5
5.5
6
6.5
VG S - Volts
Fig. 9. Source Current vs.
Source-To-Drain Voltage
60
50
40
30
TJ = 125ºC
20
10
TJ = 25ºC
0
0.4 0.5 0.6 0.7 0.8 0.9
1
1.1
VS D - Volts
10000
Fig. 11. Capacitance
f = 1MHz
1000
Ciss
C os s
100
Crss
Fig. 8. Transconductance
40
35
30
TJ = -40ºC
25ºC
125ºC
25
20
15
10
5
0
0
5 10 15 20 25 30 35 40
I D - Amperes
10
9
8
7
6
5
4
3
2
1
0
0
Fig. 10. Gate Charge
VDS = 250V
ID = 10.5A
IG = 10mA
10 20 30 40 50 60 70 80 90
Q G - nanoCoulombs
Fig. 12. Maxim um Transient Therm al
Re s is tance
1.00
0.10
10
0
5 10 15 20 25 30 35 40
VD S - Volts
0.01
1
10
100
Pulse Width - milliseconds
1000
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by one or more 4,850,072 4,931,844 5,034,796 5,063,307
of the following U.S. patents:
4,835,592 4,881,106 5,017,508 5,049,961
5,237,481 5,381,025
5,187,117 5,486,715
6,404,065B1 6,162,665 6,534,343 6,583,505
6,306,728B1 6,259,123B1 6,306,728B1 6,683,344
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