IXFT21N50Q Просмотр технического описания (PDF) - IXYS CORPORATION
Номер в каталоге
Компоненты Описание
производитель
IXFT21N50Q Datasheet PDF : 4 Pages
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Symbol
gfs
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg(on)
Qgs
Qgd
RthJC
RthCK
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
VDS = 20 V; ID = 0.5 • ID25, pulse test
14 21
S
3000
pF
VGS = 0 V, VDS = 25 V, f = 1 MHz
420
pF
110
pF
25
ns
VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
28
ns
RG = 2.0 Ω (External),
51
ns
12
ns
84
nC
VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
20
nC
35
nC
(TO-247)
0.45 K/W
0.25
K/W
Source-Drain Diode
Symbol
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
IS
VGS = 0 V
ISM
Repetitive; pulse width limited by TJM
VSD
IF = IS, VGS = 0 V,
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
21 A
84 A
1.3 V
trr
250 ns
QRM
IF = IS, -di/dt = 100 A/µs, VR = 100 V
0.85
µC
IRM
8
A
IXFH 21N50Q
IXFT 21N50Q
TO-247 AD (IXFH) Outline
123
Terminals:
1 - Gate
2 - Drain
3 - Source
Tab - Drain
Dim.
A
A1
A2
b
bb12
C
D
E
e
L
L1
∅P
Q
R
S
Millimeter
Min. Max.
4.7
5.3
2.2
2.54
2.2
2.6
1.0
1.4
1.65
2.13
2.87
3.12
.4
20.80
15.75
.8
21.46
16.26
5.20
19.81
5.72
20.32
4.50
3.55
3.65
5.89
6.40
4.32
5.49
6.15 BSC
Inches
Min. Max.
.185 .209
.087 .102
.059 .098
.040 .055
.065 .084
.113 .123
.016 .031
.819 .845
.610 .640
0.205
.780
0.225
.800
.177
.140 .144
0.232 0.252
.170 .216
242 BSC
TO-268 Outline
Terminals: 1 - Gate
2 - Drain
3 - Source Tab - Drain
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by one or more 4,850,072 4,931,844 5,034,796 5,063,307
of the following U.S. patents:
4,835,592 4,881,106 5,017,508 5,049,961
5,237,481 5,381,025
5,187,117 5,486,715
6,404,065B1 6,162,665 6,534,343 6,583,505
6,306,728B1 6,259,123B1 6,306,728B1 6,683,344
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