HY27UF084G2B Просмотр технического описания (PDF) - Hynix Semiconductor

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производитель

HY27UF084G2B

4Gbit (512Mx8bit) NAND Flash Memory

Hynix Semiconductor 

1

HY27UF(08/16)4G2B Series

4Gbit (512Mx8bit) NAND Flash

CLE

ALE

CE

WE

RE

WP

MODE

H

L

L

Rising

H

X

Command Input

Read Mode

L

H

L

Rising

H

X

Address Input(5 cycles)

H

L

L

Rising

H

H

Command Input

Write Mode

L

H

L

Rising

H

H

Address Input(5 cycles)

L

L

L

Rising

H

H

Data Input

L

L

L(1)

H

Falling

X

Sequential Read and Data Output

L

L

L

H

H

X

During Read (Busy)

X

X

X

X

X

H

During Program (Busy)

X

X

X

X

X

H

During Erase (Busy)

X

X

X

X

X

L

Write Protect

X

X

H

X

X

0V/Vcc Stand By

Table 6: Mode Selection

NOTE:

1. With the CE high during latency time does not stop the read operation

Rev 0.4 / Jan. 2008

9

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