HY27UF084G2M Просмотр технического описания (PDF) - Hynix Semiconductor

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производитель

HY27UF084G2M

4Gbit (512Mx8bit) NAND Flash

Hynix Semiconductor 

HY27UF084G2M Series

4Gbit (512Mx8bit) NAND Flash

Parameter

Valid Block Number

Symbol

Min

Typ

NVB

4016

Table 6: Valid Blocks Number

Max

4096

Unit

Blocks

NOTE:

1. The 1st block is guaranteed to be a valid block up to 1K cycles with ECC. (1bit/512bytes)

Symbol

Parameter

TA

TBIAS

TSTG

VIO(2)

Vcc

Ambient Operating Temperature (Commercial Temperature Range)

Ambient Operating Temperature (Extended Temperature Range)

Ambient Operating Temperature (Industry Temperature Range)

Temperature Under Bias

Storage Temperature

Input or Output Voltage

Supply Voltage

Value

3.3V

0 to 70

-25 to 85

-40 to 85

-50 to 125

-65 to 150

-0.6 to 4.6

-0.6 to 4.6

Unit

℃

℃

℃

℃

℃

V

V

Table 7: Absolute maximum ratings

NOTE:

1. Except for the rating “Operating Temperature Range”, stresses above those listed in the Table “Absolute

Maximum Ratings” may cause permanent damage to the device. These are stress ratings only and operation of

the device at these or any other conditions above those indicated in the Operating sections of this specification is

not implied. Exposure to Absolute Maximum Rating conditions for extended periods may affect device reliability.

2. Minimum Voltage may undershoot to -2V during transition and for less than 20ns during transitions.

Rev. 0.7 / Dec. 2006

19

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