14N36GVL Просмотр технического описания (PDF) - Fairchild Semiconductor
Номер в каталоге
Компоненты Описание
производитель
14N36GVL Datasheet PDF : 8 Pages
| |||
Specifications HGTP14N36G3VL, HGT1S14N36G3VL, HGT1S14N36G3VLS
Electrical Specifications TC = +25oC, Unless Otherwise Specified
PARAMETERS
Collector-Emitter Breakdown Voltage
Gate-Emitter Plateau Voltage
Gate Charge
Collector-Emitter Clamp Breakdown
Voltage
Emitter-Collector Breakdown Voltage
Collector-Emitter Leakage Current
Collector-Emitter Saturation Voltage
Gate-Emitter Threshold Voltage
Gate Series Resistance
Gate-Emitter Resistance
Gate-Emitter Leakage Current
Gate-Emitter Breakdown Voltage
Current Turn-Off Time-Inductive Load
Inductive Use Test
Thermal Resistance
SYMBOL
TEST CONDITIONS
BVCER
IC = 10mA,
VGE = 0V
RGE = 1kΩ
VGEP
QG(ON)
BVCE(CL)
BVECS
ICER
IC = 7A,
VCE = 12V
IC = 7A,
VCE = 12V
IC = 7A
RG = 1000Ω
IC = 10mA
VCE = 250V
RGE = 1kΩ
VCE(SAT)
IC = 7A
VGE = 4.5V
IC = 14A
VGE = 5V
VGE(TH)
R1
R2
IC = 1mA
VCE = VGE
TC = +175oC
TC = +25oC
TC = -40oC
TC = +25oC
TC = +25oC
TC = +175oC
TC = +25oC
TC = +25oC
TC = +175oC
TC = +25oC
TC = +175oC
TC = +25oC
TC = +175oC
TC = +25oC
TC = +25oC
TC = +25oC
IGES
VGE = ±10V
BVGES
IGES = ±2mA
tD(OFF)I +
tF(OFF)I
ISCIS
IC = 7A, RL = 28Ω
RG = 25Ω, L = 550µH,
VCL = 300V, VGE = 5V,
TC = +175oC
L = 2.3mH,
VG = 5V,
TC = +175oC
TC = +25oC
RθJC
LIMITS
MIN
TYP MAX UNITS
320
355
400
V
330
360
390
V
320
350
385
V
-
2.7
-
V
-
24
-
nC
350
380
410
V
24
28
-
V
-
-
25
µA
-
-
250
µA
-
1.25 1.45
V
-
1.15
1.6
V
-
1.6
2.2
V
-
1.7
2.9
V
1.3
1.8
2.2
V
-
75
-
Ω
10
20
30
kΩ
±330 ±500 ±1000
µA
±12
±14
-
V
-
7
-
µs
12
-
-
A
17
-
-
A
-
-
1.5
oC/W
©2001 Fairchild Semiconductor Corporation
HGTP14N36G3VL, HGT1S14N36G3VL, HGT1S14N36G3VLS Rev. B
Share Link: 