DS1321(1999) Просмотр технического описания (PDF) - Dallas Semiconductor -> Maxim Integrated
Номер в каталоге
Компоненты Описание
производитель
DS1321
(Rev.:1999)
(Rev.:1999)
Dallas Semiconductor -> Maxim Integrated
DS1321 Datasheet PDF : 12 Pages
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ABSOLUTE MAXIMUM RATINGS*
Voltage on Any Pin Relative to Ground
Operating Temperature
Storage Temperature
Soldering Temperature
-0.5V to +7.0V
-40°C to +85°C
-55°C to +125°C
260°C for 10 seconds
DS1321
* This is a stress rating only and functional operation of the device at these or any other conditions
above those indicated in the operation sections of this specification is not implied. Exposure to
absolute maximum rating conditions for extended periods of time may affect reliability.
RECOMMENDED DC OPERATING CONDITIONS
PARAMETER
Supply Voltage TOL=GND
Supply Voltage TOL=VCCO
Battery Supply Voltage
Logic 1 Input
Logic 0 Input
SYMBOL
VCCI
VCCI
VBAT
VIH
VIL
MIN
4.75
4.5
2.0
2.0
-0.3
TYP
5.0
5.0
3.0
MAX
5.5
5.5
6.0
VCCI+0.3
+0.8
(-40°C to +85°C)
UNITS NOTES
V
1
V
1
V
1
V
1, 12
V
1, 12
DC ELECTRICAL CHARACTERISTICS
PARAMETER
Operating Current (TTL inputs)
Operating Current (CMOS inputs)
RAM Supply Voltage
SYMBOL
ICC1
ICC2
VCCO
RAM Supply Current
(VCCO ≥ VCCI -0.2V)
Supply Current
(VCCO ≥ VCCI -0.3V)
VCC Trip Point (TOL=GND)
VCC Trip Point (TOL=VCCO)
VBAT Trip Point
Output Current @ 2.2V
Output Current @ 0.4V
Input Leakage
Output Leakage
Battery Monitoring Test Load
ICCO1
ICCO2
VCCTP
VCCTP
VBTP
IOH
IOL
IIL
ILO
RINT
MIN
VCC1
-0.2
4.50
4.25
2.50
-1
-1.0
-1.0
0.8
(-40°C to +85°C; VCCI ≥ VCCTP)
TYP MAX UNITS NOTES
1
1.5
mA
2
100
150
µA
2, 5
V
1
185
mA
3
260
mA
4
4.62
4.75
4.37
4.50
2.6
2.70
4
+1.0
+1.0
1.2
1.5
V
1
V
1
V
1
mA
7, 10
mA
7, 10
µA
µA
MΩ
DC ELECTRICAL CHARACTERISTICS (-40°C to +85°C; VCCI < VBAT; VCCI < VCCTP)
PARAMETER
SYMBOL MIN TYP MAX UNITS NOTES
Battery Current
Battery Backup Current
Supply Voltage
CEO Output
IBAT
ICCO3
VCCO
VOHL
VBAT-0.2
VBAT-0.2
100
nA
2
500
µA
6
V
1
V
1, 8
6 of 12
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