DTC124ECA Просмотр технического описания (PDF) - Willas Electronic Corp.
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DTC124ECA Datasheet PDF : 2 Pages
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WILLAS
FM120-M+
DTC124ECATHRU
1.0NA PSUNRFDACigE iMtOaUlNTTrSaCnHOsTiTsKtYoBrARRIER RECTIFIERS -20V- 200V
FM1200-M
SOD-123+ PACKAGE
Features
Typical CharactePriasctkiacgse outline
• Batch process dOeNsCighna,reacxtceerilsletinctspower dissipation offers
OFF Characteristics
100 better reverse leakage current and thermal resistance.
10
• Low profile surface mounted application inVOo=r0d.2eVr to
SOD-123H
optimize board space.
30 • Low power loss, high efficiency.
3
• High current capability, low forward voltage drop.
10 • High surge capability.
1
• Guardring for overvoltage protection.
Ta=100℃
0.146(3.7)
0.130(3.3)
• Ultra high-speed switching.
3 • Silicon epitaxial planar cTha=ip25,℃metal silicon junction.
0.3
• Lead-free parts meet environmental standards of
MIL-STD-19500 /228
Ta=100℃
1
0.1
• RoHS product for packing code suffix "G"
Ta=25℃
Halogen free product for packing code suffix "H"
0.3 Mechanical data
0.03
• Epoxy : UL94-V0 rated flame retardant
• 0.1
0.1
Case
0:.3Molded
p1 lastic,
S3 OD-12310H
30
100
,
• Terminals :POlUaTtePUdTtCeUrmRRinENaTls,IOso(lmdAe)rable per MIL-STD-750
Method 2026
0.01
0.4
0.031(0.08.)8Typ.
1.2
1.6
INPUT VOLTAGE VI(OFF) (V)
Pb Free Produc
0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
0.040(1.0)
0.024(0.6)
VCC=5V
0.031(02..80) Typ.
• Polarity : Indicated by cathode band
•
Mounting
V ——
PositionO(O: NA) ny
I
O
1000
1000
• Weight : Approximated 0.011 gram
IO/II=20
Dimensions in inches and (millimeters)
G —— I
I
O
VO=5V
MAXIMUM RATINGS AND ELECTRICAL CHAR30A0 CTERISTICS
Ratin30g0s at 25℃ ambient temperature unless otherwise specified.
Single phase half wave, 60Hz, resistive of inductive load.
100
For capacitive load, derate current by 20%
Ta=100℃
Ta=25℃
100
Marking Code
RATINGS Ta=100℃
Maximum Recurrent Peak Reverse Voltage Ta=25℃
Maximum RMS Voltage
30
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
SYMBOL FM120-MH FM130-3M0H FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
12
13
14
15
16
18
10
115 120
VRRM
20
30
40
10
50
60
VRMS
14
21
28
35
42
80
100
150
200
56
70
105
140
VDC
20
30
40
50
60
3
80
100
150
200
IO
1.0
Peak F1o0rward Surge Current 8.3 ms single half sine-wave
1
3
10
30
IFSM
100
superimposed on rated loaOdU(TJPEUDTECCUmRRetEhNoTd) IO (mA)
Typical Thermal Resistance (Note 2)
RΘJA
1
0.1
0.3
1
33 0 5
10
30
100
OUTPUT CURRENT
40
IO
(mA)
Typical Junction Capacitance (Note 1)
CJ
120
Operating Temperature RangeC —— V
Storag1e0 Temperature Range O
R
CHARACTERISTICS
TJ
TSTG
-55 to +125
400
P —— T
D- 65 to +17a5
-55 to +150
f=1MHz
SYMTaB=2O5L℃FM120-MH FM1303-5M0H FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
Maximu8m Forward Voltage at 1.0A DC
VF
0.50
0.70
0.85
0.9
0.92
Maximum Average Reverse Current at @T A=25℃
IR
300
0.5
Rated DC Blocking Voltage
@T A=125℃
10
250
6
NOTES:
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
DTC124ECA
200
2- Therm4 al Resistance From Junction to Ambient
150
100
2
50
0
0
4
8
12
16
20
2012-06
REVERSE BIAS VOLTAGE VR (V)
2012-0
0
0
25
50
75
100
125
150
AMBIENT TEMPERWATUIRLELTAa S(℃)ELECTRONIC COR
WILLAS ELECTRONIC CORP.
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